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| TEST2600 Vishay Telefunken Silicon NPN Phototransistor Description TEST2600 is a high sensitive silicon NPN epitaxial planar phototransistor in a miniature side view plastic package with cylindrical lens. Its epoxy casting is designed as a infrared filter to spectrally match to GaAs IR emitters (lp=950nm). Features D D D D D High radiant sensitivity (2.5 mA) Miniature side view package with cylindrical lens Very wide viewing angle = 30/ 60 Suitable for near IR radiation Matches with TSSS2600 IR emitter 94 8673 Applications Optical switches Counters and sorters Interrupters Tape and card readers Encoders Position sensors Absolute Maximum Ratings Tamb = 25_C Parameter Collector Emitter Voltage Emitter Collector Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO VECO IC ICM Ptot Tj Tstg Tsd RthJA Value 70 5 50 100 100 100 -55...+100 260 450 Unit V V mA mA mW C C C K/W tp/T = 0.5, tp 10 ms Tamb 55 C x x t x 3 s, 2 mm from case Document Number 81562 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) TEST2600 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Emitter Capacitance Collector Light Current Angle of Half Sensitivity g y Test Conditions IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E=0 Ee = 1 mW/cm2, l = 950 nm, VCE = 5 V horizontal vertical Symbol V(BR)CE O Min 70 Typ Max Unit V nA pF mA deg deg nm nm V ICEO CCEO Ica 1 2 lp l0.5 VCEsat ton toff fc 1 1 6 2.5 30 60 920 850...980 100 Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 1 mW/cm2, Voltage l = 950 nm, IC = 0.1 mA Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 W Turn-Off Time VS = 5 V, IC = 5 mA, RL = 100 W Cut-Off Frequency VS = 5 V, IC = 5 mA, RL = 100 W 0.3 6 5 110 ms ms kHz Typical Characteristics (Tamb = 25_C unless otherwise specified) 125 P tot - Total Power Dissipation ( mW ) 100 I CEO - Collector Dark Current ( nA ) 104 103 VCE = 10V 102 75 RthJA 50 25 0 0 20 40 60 80 100 101 100 20 94 8249 40 60 80 100 94 8308 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81562 Rev. 2, 20-May-99 TEST2600 Vishay Telefunken 2.0 I ca rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 94 8239 C CEO - Collector Emitter Capacitance ( pF ) 20 16 f=1MHz VCE=5V Ee=1mW/cm2 l=950nm 12 8 4 0 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) 20 40 60 80 100 94 8247 Tamb - Ambient Temperature ( C ) Figure 3. Relative Collector Current vs. Ambient Temperature t on / t off - Turn on / Turn off Time ( m s ) 10 Ica - Collector Light Current ( mA ) Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 10 8 6 4 2 0 ton VCE=5V RL=100W 1 l=950nm 0.1 VCE=5V l=950nm toff 0.01 0.01 94 8268 0.1 Ee - Irradiance ( 1 mW / cm2 ) 10 94 8253 0 4 8 12 16 IC - Collector Current ( mA ) Figure 4. Collector Light Current vs. Irradiance 10 Ica - Collector Light Current ( mA ) l=950nm Figure 7. Turn On/Turn Off Time vs. Collector Current S ( l ) rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 700 Ee=1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 0.1 1 10 100 800 94 8269 VCE - Collector Emitter Voltage ( V ) 94 8270 l - Wavelength ( nm ) 900 1000 1100 Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Relative Spectral Sensitivity vs. Wavelength Document Number 81562 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) TEST2600 Vishay Telefunken 0 10 20 0 30 S rel - Relative Sensitivity 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8273 94 8274 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement Figure 10. Relative Radiant Sensitivity vs. Angular Displacement Dimensions in mm 95 11487 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81562 Rev. 2, 20-May-99 TEST2600 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81562 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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